Trap‐Assisted Charge Generation and Recombination in State‐of‐the‐Art Organic Photodetectors

The performance of organic photodetectors is steadily improving, and the specific detectivity, as a key figure merit, has reached values 1012–1013 Jones, i.e., comparable to that silicon diodes but still considerably lower than intrinsic limit. As with other semiconductor devices, electrical state-of-the art photodiodes (OPDs) presently determined high degree by presence chemical impurities or structural defects which create carrier trapping states within bandgap active layer. This review aims provide comprehensive timely account trap-assisted charge generation recombination in OPDs, emphasis on impact these phenomena photodetector parameters such as, noise dark current density, responsivity, response speed, ultimately, detectivity.